Thyristor and method of manufacture

Details Thyristor and method of manufacture Thyristor and method of manufacture

2008-03-04

2008-03-04

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S115000, C257S157000, C257SE29036, C257SE29037, C438S048000, C438S133000

Reexamination Certificate

active

07339203

ABSTRACT:
A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region extends into a portion of the gate region. Optionally, enhanced doped regions extend into the gate and anode regions. A mesa structure having a height HGis formed from the first major surface and a mesa structure having a height HAis formed from the second major surface. The gate region extends under the first major surface of the semiconductor substrate and it extends vertically into the semiconductor substrate a distance that is greater than height HG. The anode region extends under the second major surface of the semiconductor substrate and it extends vertically into the semiconductor substrate a distance that is greater than height HA.

REFERENCES:
patent: 5027180 (1991-06-01), Nishizawa et al.
patent: 5281832 (1994-01-01), Clark et al.
patent: 5483087 (1996-01-01), Ajit
patent: 5610434 (1997-03-01), Brogle et al.
patent: 5629535 (1997-05-01), Ajit
patent: 6965131 (2005-11-01), Chang
Fundamental Characteristics of Thyristors, Thyristor Product Catalog, AN1001-1 to -5. Copyrighted 2004. Retrieved from www.littelfuse.com.
Gating, Latching, and Holding of SCRs and Triacs Product Catalog, AN1002-1 to -5. Copyrighted 2004. Retrieved from www.littelfuse.com.

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