Thyristor

Details Thyristor Thyristor

1991-06-25

1992-12-15

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

257382, 257579, H01L 2974

Patent

active

051722089

ABSTRACT:
A thyristor (38) is formed over an insulating layer (44). A gate (70) is operable to create a depletion region through the semiconductor layer (46) in which the thyristor (38) is implemented in order to turn the thyristor off. Isolation regions (48, 52) prevent operation of the thyristor from affecting adjacent devices.

REFERENCES:
patent: 4631561 (1986-12-01), Foroni et al.
patent: 4631567 (1986-12-01), Kokado et al.
patent: 4636830 (1987-01-01), Bhagat
patent: 4654543 (1987-03-01), Atsumi
patent: 4794411 (1988-12-01), Sugawara et al.
patent: 4843448 (1989-06-01), Garcia et al.
patent: 4969023 (1990-11-01), Svedberg
patent: 4990978 (1991-02-01), Kondoh
patent: 5051808 (1991-09-01), Saito et al.
patent: 5075737 (1991-12-01), Shinohara

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