Thyristor

Details Thyristor Thyristor

1992-11-16

1995-12-19

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257110, 257155, 257175, 257120, 257132, 257149, H01L 2974, H01L 29747, H01L 2906

Patent

active

054770645

ABSTRACT:
An object of the present invention is to provide a semiconductor device which is designed so as to increase a maximum controllable current and decrease hold current without degrading its characteristic and to provide a method of manufacturing such a semiconductor device. A transistor formation region 3 and a P diffusion region 15 are selectively formed through an insulating film 4 between gate electrodes 5 on an N.sup.- epitaxial layer 2. In a transistor formation region 3, an N.sup.+ diffusion region 12 is formed on a P diffusion region 11, a P diffusion region 13 is formed on the N.sup.+ diffusion region 12, and an N.sup.+ diffusion region 14 is selectively formed on a surface of the P diffusion region 13. Then, a cathode electrode 7 is formed on the P diffusion region 13, N.sup.+ diffusion region 14 and P diffusion region 15, and an anode electrode 8 is formed on a second major surface of the P.sup.+ substrate 1. Due to a structural characteristic that an increase in current between electrodes 7 and 8 causes no latch-up phenomenon, etc., a maximum controllable current can be increased, and hold current can be decreased.

REFERENCES:
patent: 4782379 (1988-11-01), Baliga
patent: 4961099 (1990-10-01), Roggwiller
patent: 5202750 (1993-04-01), Gough

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