Thyristor

Details Thyristor Thyristor

1997-02-25

1998-05-12

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257145, 257146, 257147, 257154, 257157, 257161, H01L 2974, H01L 31111

Patent

active

057510229

ABSTRACT:
A semiconductor device is disclosed having a thyristor region coupled to a semiconductor switching device and a semiconductor rectifier. During turn-off operation, holes are drained from the p-type base region of the thyristor region through the semiconductor rectifier and to the cathode of the thyristor. During turn-on, electrons are supplied to an n-type emitter region of the thyristor from the cathode electrode through the semiconductor switching device.

REFERENCES:
patent: 5072287 (1991-12-01), Nakagawa et al.
patent: 5235201 (1993-08-01), Honna
patent: 5349212 (1994-09-01), Seki
patent: 5488536 (1996-01-01), Bonavia et al.
Patent Abstracts of Japan, vol. 17, No. 401, Jul. 27, 1993 for Japanese published Application No. 5-75113.
"Lateral Junction-Isolated Emitter Switched Thyristor", B. Jayant Baliga et al., IEEE Electron Device Letters, vol. 13, No. 12, Dec. 1992, pp. 615-617.
"High Gain Power Switching Using Field Controlled Thyristors", B.J. Baliga, Solid State Electronics, 25(5):345-353 (1982).

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