Thru silicon enabled die stacking scheme

Details Thru silicon enabled die stacking scheme Thru silicon enabled die stacking scheme

2011-07-05

2011-07-05

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C257S686000, C257S774000, C257SE23145

Reexamination Certificate

active

07973416

ABSTRACT:
A die to die bonding system and method includes an upper die having a front side, a back side, and a fully filled thru silicon via, a portion of the fully filled thru silicon via protruding from the back side of the upper die. A lower die includes a front side, a back side, and a partially filled thru silicon via formed to define a via opening exposed to the front side of the die, a portion of the partially filled thru silicon via protruding from the back side of the lower die. An interconnect bonds an outer surface of the protruding portion of the upper die thru silicon via with an inner surface of via opening in the lower die.

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