Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-05-25
2009-02-03
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C438S405000
Reexamination Certificate
active
07485965
ABSTRACT:
A through via in an ultra high resistivity wafer and related methods are disclosed. A method for forming a through via comprises: providing a semiconductor wafer including a first silicon layer, a buried dielectric layer, and a substrate; forming a device on the first silicon; and forming a via from a side of the substrate opposite to the buried dielectric layer and through the substrate. Also disclosed is a method for providing a wafer varied resistivity using the through vias and buried dielectric.
REFERENCES:
patent: 6835981 (2004-12-01), Yamada et al.
Lanzerotti Louis D.
Levy Max G.
Shi Yun
Voldman Steven H.
Hoffman Warnick LLC
International Business Machines - Corporation
Potter Roy K
Sabo William D.
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