Through-substrate source contact for microwave FET

Details Through-substrate source contact for microwave FET Through-substrate source contact for microwave FET

1975-06-30

1976-10-12

Wojciechowicz, Edward J.

357 23, 357 55, 357 68, 357 81, H01L 2980, H01L 2906, H01L 2348, H01L 2302

Patent

active

039861961

ABSTRACT:
A microwave field effect transistor (FET) comprises source, gate, and drain electrodes deposited on an epitaxial layer grown on a semi-insulating substrate. The FET has lowered thermal resistance, lowered source lead inductance, and lowered gate series resistance, together with concomitant performance improvements, through the use of a novel source electrode connection which comprises a deposited or plated through metallic contact extending from the bottom of the wafer, through a hole in the substrate and epitaxial layer, to the underside of the source or other electrode which is deposited on the top side of the epitaxial layer. The chip, comprising the substrate, epitaxial layer, and top electrodes, is mounted on a heat sink. The chip's underside, including the bottom surface of the plated through source contact, is conductively bonded to the top surface of the heat sink.

REFERENCES:
patent: 3787252 (1974-01-01), Fillippazzi et al.

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