Threshold voltage verification circuit of a non-volatile memory

Static information storage and retrieval – Floating gate – Particular biasing

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Details

36518518, 36518529, 365218, G11C 1134

Patent

active

056992963

ABSTRACT:
This invention relates to a threshold voltage verification circuit of a non-volatile memory cell which can automatically verify a threshold voltage of the cell according to the change of electron charge which is injected to a floating gate of the cell in program operation and erasure operation for the cell.

REFERENCES:
patent: 5179537 (1993-01-01), Matsumoto
patent: 5265059 (1993-11-01), Wells et al.
patent: 5426611 (1995-06-01), Maruyama
patent: 5463586 (1995-10-01), Chao et al.
patent: 5557572 (1996-09-01), Sawada et al.
patent: 5572465 (1996-11-01), Bashir

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