Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1980-12-05
1983-08-23
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 307450, 307571, H03K 19094, H03K 19003, H03K 1912, H03K 1920
Patent
active
044006365
ABSTRACT:
A logic gate is disclosed employing enhancement mode MESFET gallium arsenide devices which do not require the tight process control necessary in the prior art because two such devices are employed in the gate circuit to mutually compensate for the effects of their equal deviation from nominal threshold voltages.
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Suzuki et al., "Logic Circuits with 2 .mu.m Gate Schottky Barrier FETs", Proc. of 6th Conf. on Solid State Devices, Tokyo, Jap.; 1974, pp. 219-224.
Nuzillat et al., "A Subnanosecond Integrated Switching Circuit with MESFET's for LSI"; IEEE JSSC, vol. SC-11, No. 3, pp. 385-394; 6/1976.
Richard C. Eden, et al., "The Prospects for Ultrahigh-Speed VLSI GaAs Digital Logic," IEEE Journal of Solid-State Circuits, vol. SC-14, No. 2, Apr. 1979, pp. 221-239.
Anagnos Larry N.
IBM Corporation
Klitzman Maurice H.
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