Threshold voltage shift in NROM cells

Details Threshold voltage shift in NROM cells Threshold voltage shift in NROM cells

2008-03-04

2008-03-04

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C365S185240, C365S201000

Reexamination Certificate

active

11103367

ABSTRACT:
An NROM (nitride read only memory) cell, which is programmed by channel hot electron injection and erased by hot hole injection, includes a charge trapping structure formed of: a bottom oxide layer, a charge trapping layer; and a top oxide layer. The bottom oxide layer is no thicker than that which provides margin stability.

REFERENCES:
patent: 7116577 (2006-10-01), Eitan
patent: 7164603 (2007-01-01), Shih et al.
patent: 7209390 (2007-04-01), Lue et al.
patent: 7242622 (2007-07-01), Hsu et al.
patent: 2004/0136220 (2004-07-01), Cohen
patent: 2005/0111257 (2005-05-01), Eitan
M. Specht, et al. “Novel Dual Bit Tri-Gate Charge Trapping Memory Devices”, IEEE Electron Device Letters vol. 25, No. 12, Dec. 12, 2004.
U.S. Appl. No. 11/007,332, Maayan et al.
U.S. Appl. No. 10/695,449, Cohen et al.

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