Threshold voltage shift in NROM cells

Details Threshold voltage shift in NROM cells Threshold voltage shift in NROM cells

2008-03-04

2008-03-04

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C365S185240, C365S201000

Reexamination Certificate

active

07339826

ABSTRACT:
An NROM (nitride read only memory) cell, which is programmed by channel hot electron injection and erased by hot hole injection, includes a charge trapping structure formed of: a bottom oxide layer, a charge trapping layer; and a top oxide layer. The bottom oxide layer is no thicker than that which provides margin stability.

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U.S. Appl. No. 10/695,449, Cohen et al.

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