Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-03-31
1997-02-04
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
3651852, 36518521, G11C 1602
Patent
active
056005946
ABSTRACT:
A circuit device for measuring the threshold voltage distribution among electrically programmable, non-volatile memory cells, which device comprises a differential amplifier having a first input connected to a first circuit leg including at least one memory cell and a second input connected to a second or reference circuit leg, and circuit means effective to cause an unbalance in the values of the currents flowing in the reference leg. The device is connected between a first supply voltage reference and a second voltage reference, and said circuit means comprise a generator of a varying current as a function of the supply voltage which is associated with the reference leg.
REFERENCES:
patent: 4253059 (1981-02-01), Bell et al.
patent: 4301535 (1981-11-01), McKenny et al.
patent: 4612630 (1986-09-01), Rosier
patent: 5039941 (1991-08-01), Castro
patent: 5396467 (1995-03-01), Liu
patent: 5420822 (1995-05-01), Kato
patent: 5469397 (1995-11-01), Hoshino
"Current Bias Testing for Memory Cells," IBM Technical Disclosure Bulletin, Armonk, New York, U.S.A., vol. 33(3B), pp. 343-344, Aug. 1990.
Tsukude et al., "Highly Reliable Testing of ULSI Memories with On-Chip Voltage-Down Converters," IEEE Design & Test of Computers, Los Alamitos, California, U.S.A., vol. 10(2), pp. 6-12, Jun. 1993.
Maccarrone Marco
Olivo Marco
Padoan Silvia
Ahn Harry K.
Carlson David V.
Mai Son
Nelms David C.
SGS--Thomson Microelectronics S.r.l.
LandOfFree
Threshold voltage measuring device for memory cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Threshold voltage measuring device for memory cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Threshold voltage measuring device for memory cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-685898