Threshold voltage adjustment for MOS devices

Details Threshold voltage adjustment for MOS devices Threshold voltage adjustment for MOS devices

2005-03-01

2005-03-01

Han, Jessica (Department: 2838)

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

C323S280000

Reexamination Certificate

active

06861832

ABSTRACT:
The Vt of an MOS transistor is lowered in response to its load current. In a LDO (low dropout) regulator, lowering the Vt of the pass transistor with load increases the level of drive that can be applied to the pass transistor thus allowing a smaller transistor to be used for the same load.

REFERENCES:
patent: 4928056 (1990-05-01), Pease
patent: 6188212 (2001-02-01), Larson et al.
patent: 6559623 (2003-05-01), Pardoen
Rincon-Mora, A Low-Voltage, Low Qulescent Current, Low Drop-Out Regulator, IEEE Journal of Solid-State Circuits, Jan. 1998, pp. 36-44, vol. 33, No. 1.

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