Threshold value read method of nonvolatile semiconductor...

Details Threshold value read method of nonvolatile semiconductor... Threshold value read method of nonvolatile semiconductor...

2006-07-13

2008-07-29

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185220

Reexamination Certificate

active

07405975

ABSTRACT:
A threshold voltage read method of a nonvolatile semiconductor memory device is disclosed. The threshold voltage read method applies a first threshold voltage measuring read voltage to the word line with a selection gate kept in a nonconductive state and then makes the selection gate conductive to read out a threshold voltage of the first data at the time of reading out the threshold voltage of the first data. Then, it applies a second threshold voltage measuring read voltage to the word line with the selection gate kept in the conductive state to read out a threshold voltage of the second data at the time of reading out the threshold voltage of the second data.

REFERENCES:
patent: 6850435 (2005-02-01), Tanaka
patent: 6975537 (2005-12-01), Lutze et al.
patent: 7009889 (2006-03-01), Tran et al.
patent: 10 1991-0017443 (1991-11-01), None
patent: 1997-0051349 (1997-07-01), None

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