Threshold circuit using complementary field effect transistors

Details Threshold circuit using complementary field effect transistors Threshold circuit using complementary field effect transistors

1979-05-04

1982-04-20

LaRoche, Eugene R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307361, 307464, 357 42, H03K 19094, H03K 19017

Patent

active

043261361

ABSTRACT:
A threshold arrangement includes two complementary transistors whose channels are situated in series between two supply terminals. In order to obtain a substantially square-wave relationship between the output voltage on the common drain electrodes and the input voltage on the interconnected gate electrodes, a direct voltage source is included between the two gate electrodes, which source has a voltage which is preferable substantially equal to the supply voltage minus the sum of the threshold voltages of the two complementary transistors.

REFERENCES:
patent: 3823330 (1974-07-01), Rapp
patent: 4032795 (1977-06-01), Hale

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