Three-transistor content addressable memory

Details Three-transistor content addressable memory Three-transistor content addressable memory

1986-08-28

1989-01-17

Hecker, Stuart N.

Static information storage and retrieval

Associative memories

Ferroelectric cell

365181, G11C 1504

Patent

active

047991925

ABSTRACT:
A content addressable memory cell includes two storage field effect transistors of opposite conductivity type with their gates connected in common. A single write transistor is connected between the common gates and a bitline for storing a potential on the gates from the bitline.

REFERENCES:
patent: 3575617 (1971-04-01), Burns
patent: 3701980 (1972-10-01), Mundy
patent: 3765000 (1973-10-01), Regitz
patent: 3846766 (1974-11-01), Nojima et al.
patent: 3876991 (1975-05-01), Nelson et al.
patent: 4084108 (1978-05-01), Fujimoto
patent: 4112510 (1978-09-01), Baker
patent: 4247919 (1981-01-01), White, Jr. et al.
patent: 37053906 (1972-12-01), Mundy

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