Three terminal tunneling device and method

Details Three terminal tunneling device and method Three terminal tunneling device and method

1988-10-26

1990-09-25

Wojciechowicz, Edward J.

357 4, 357 34, H01L 29161, H01L 29205, H01L 29225

Patent

active

049596969

ABSTRACT:
A tunneling device (50) with the emitter (62) to collector (58) current transported by resonant tunneling through a quantum well (52) and controlled by carriers injected into the well (52) from a base (60) is disclosed. The injected carriers occupy a first energy level in the well (52) and the resonant tunneling is thorough a second energy level in the well (52) thereby separating the controlled carriers from the controlling carriers. Three-terminal tunneling devices using three different bandgap semiconductor materials to segregate controlling carriers from controlled carriers are disclosed. Preferred embodiments include narrow bandgap quantum wells and medium bandgap emitters so that narrow bandgap bases may inject and withdraw controlling electrons to the well by tunneling with the controlled electron current tunneling through a higher energy level in the well or so that medium bandgap bases may control holes in the well with only a small forward bias on the emitter-base junction and thereby control electrons tunneling through the well from emitter to collector.

REFERENCES:
Yokoyama et al., "A New Functional, Resonant-Tunneling Hot Electron Transistor", Jap. J. of Appl. Phys., Nov. 1985, L853-L854.
Ricco and Solomon, "Tunable Resonant Tunnelling Semiconductor Emitter Structure", 27 IBM Tech Discl Bull 3053, Oct., 1984.

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