Three terminal tunneling device and method

Details Three terminal tunneling device and method Three terminal tunneling device and method

1990-07-24

1991-10-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437129, H01L 21205

Patent

active

050595458

ABSTRACT:
A tunneling device (50) with the emitter (62) to collector (58) current transported by resonant tunneling through a quantum well (52) and controlled by carriers injected into the well (52) from a base (60) is disclosed. The injected carriers occupy a first energy level in the well (52) and the resonant tunneling is thorough a second energy level in the well (52) thereby separating the controlled carriers from the controlling carriers. Another
Three-terminal tunneling devices using three different bandgap semiconductor materials to segregate controlling carriers from controlled carriers are disclosed. Preferred embodiments include narrow bandgap quantum wells and medium bandgap emitters so that narrow bandgap bases may inject and withdraw controlling electrons to the well by tunneling with the controlled electron current tunneling through a higher energy level in the well or so that medium bandgap bases may control holes in the well with only a small forward bias on the emitter-base junction and thereby control electrons tunneling through the well from emitter to collector.

REFERENCES:
patent: 4163237 (1989-07-01), Dingle et al.
patent: 4286275 (1981-08-01), Heiblum
patent: 4396931 (1983-08-01), Dumke et al.
patent: 4529996 (1985-07-01), Pande
patent: 4558336 (1985-12-01), Chang et al.
patent: 4575924 (1986-03-01), Reed et al.
patent: 4665412 (1987-03-01), Ohkawa et al.
patent: 4758870 (1988-07-01), Hase et al.
Ricco and Solomon, "Tunable Resonant Tunnelling Semiconductor Emitter Structure", 27 IBM Tech Discl. Bull. 3053, Oct., 1984.
Chang, L. L., et al. "Tunnel Triode--A Tunneling Base Transistor" Appl. Phys. Lett. 15 Nov. 1977 pp. 687-689.
Zipperian, T. E., et al, "InGaAs/GaAs, Strained-Layer Superlattice . . . " IEDM 84, Dec. 1984, pp. 524-527.
Yokoyama, N., et al. "A New Functional, Resonant--Tunneling Hot Electron Transistor" JJAP, 11 Nov. 1985, pp. 853-854.

Affiliated with

Also associated with

Rating

Three terminal tunneling device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three terminal tunneling device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three terminal tunneling device and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-108027