Three terminal tunneling device

Details Three terminal tunneling device Three terminal tunneling device

1986-01-31

1988-01-26

Edlow, Martin H.

357 16, 357 2315, 357 232, H01L 2712, H01L 4500, H01L 4902

Patent

active

047219831

ABSTRACT:
A three terminal tunneling device analogous to a field effect transistor is disclosed. Preferred embodiments include a planar quantum well (52) with a gate insulator (56) and gate (58) on one surface and with a tunneling barrier (54) and source (62) and drain (60) on the other surface. The conduction current comprises electrons tunneling from the source (62) into the well (52) and then out into the drain (60). The gate (58) bias shifts the well subband levels up and down to establish and disrupt resonance for the tunneling from the source (62) into the well (52). Other preferred embodiments include interdigitated source and drain, multiple gates, multiple wells, and floating gates.

REFERENCES:
patent: 4641161 (1987-02-01), Kim et al.

Affiliated with

Also associated with

Rating

Three terminal tunneling device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three terminal tunneling device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three terminal tunneling device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1470687