Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device – In three or more terminal device
Patent
1996-01-31
1997-11-11
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
In three or more terminal device
257104, 257106, 257 46, 257192, 257347, H01L 29868, H01L 29885
Patent
active
056867395
ABSTRACT:
Disclosed is a three terminal tunnel device exhibiting a tunneling of carriers in a forward direction. The device comprises an intrinsic semiconductor region, an n-type degenerate semiconductor source region abutting one side of the intrinsic semiconductor region, a p-type degenerate semiconductor drain region abutting an opposite side of the intrinsic semiconductor region, an insulation region separating the three semiconductor regions from a semiconductor substrate, and a gate electrode being provided over the intrinsic semiconductor region through an insulation layer, whereby voltage signals to be applied to the gate electrode permit controlling a carrier concentration at a surface of the intrinsic semiconductor region. The device permits controlling a tunneling current of a forward-biased degenerate p-n junction and a current-voltage characteristic manifesting a negative differential resistance with the gate voltage signals.
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*Y. Omura, Lateral Unidirectional Bipolar-Type Insulated-Gate Transitors, Japanese Journal of Applied Physics, Supplements, vol. 22, No. 22-1, 1983, Tokyo, Japan, pp. 263-266.
Jackson Jerome
NEC Corporation
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