Three terminal semiconductor laser

Details Three terminal semiconductor laser Three terminal semiconductor laser

1982-08-24

1985-08-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 22, 357 41, 372 46, H01S 319

Patent

active

045340331

ABSTRACT:
A semiconductor laser includes an anode region of a first conductivity type made of a highly doped region, an active layer adjacent the anode region, a channel region made of a high-resistivity region and adjacent the active layer, a cathode region of a second conductivity type at one end of the channel region which is made of a highly doped region, and a gate region that surrounds at least part of said channel region and which is made of a highly doped region of the first conductivity type. The anode region and channel region have a wider band gap than that of the active layer.

REFERENCES:
patent: 4408330 (1983-10-01), An et al.
patent: 4430741 (1984-02-01), Fukuzawa et al.
"Bipolar Mode Static Induction Transistor (BSIT) High Speed Switching Device", J. Nishizawa, T. Ohmi, Y. Mochida, T. Matsuyama and S. Iida-International Electron Device Meeting (IEDM), 1978 Dec. 4-6, Washington, D.C., pp. 676-679.
"Punching Through Device and Its Integration Static Induction Transistor", Tadahiro Ohmi-IEEE Transaction on Electron Device, vol. ED-27, No. 3, Mar. 1980, pp. 536-545.

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