Three terminal semiconductor device

Details Three terminal semiconductor device Three terminal semiconductor device

1990-02-22

1991-04-30

Hille, Rolf

357 16, 357 17, 357 30, H01L 2712, H01L 2900, H01L 3300, H01L 2714

Patent

active

050123017

ABSTRACT:
A three terminal semiconductor device relies on resonant tunnelling through a quantum well resonator for its operation. The device has a first layer of a narrow bandgap semiconductor, a second layer of a narrow bandgap semiconductor, and a quantum well resonator between the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor. The quantum well resonator comprises a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor. All of the layers referred to above have a common conductivity polarity. The semiconductor device further comprises an electrical contact to the first layer of a narrow bandgap semicondcutor, an electrical contact to the second layer of a narrow bandgap semiconductor, and a terminal for applying a non-uniform electric field to the quantum well resonator to modulate resonant tunnelling characteristics of the quantum well resonator. The terminal for applying a non-uniform electric field to the quantum well resonator may comprise a field plate on the first layer of a narrow bandgap semiconductor, on the second layer of a narrow bandgap semiconductor. Alternatively, the terminal for applying a non-uniform electric field to the quantum well resonator may comprise a doped region extending into the third layer of a narrow bandgap semiconductor. The semiconductor device is useful in switching or logic applications, and in millimeter wave applications.

REFERENCES:
patent: 4704622 (1987-11-01), Capasso et al.
patent: 4841533 (1989-06-01), Hayakawa et al.
patent: 4853753 (1989-08-01), Capasso et al.
patent: 4894526 (1990-01-01), Bethea et al.
"Observation of Resonant Tunneling in AlGaAs/GaAs Triple Barrier Diodes", Kakagawa et al., Appl. Phys. Lett., vol. 49, #2, Jul. 1986, pp. 73-75.
"Resonant Tunneling: Physics, New Transistors and Superlattice Devices", Capasso et al., SPIE vol. 792, Quantum Well and Superlattice Physics, (1987), p. 10.

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