Three-terminal power MOSFET switch for use as synchronous rectif

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Accelerating switching

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327427, 327581, H03K 17687

Patent

active

059296909

ABSTRACT:
An N-channel power MOSFET is fabricated with its source and body connected together and biased at a positive voltage with respect to its drain. The gate is controlled by a switch which alternately connects the gate to the source or to a voltage which turns the channel of the MOSFET fully on. When the gate is connected to the source, the device functions as a "pseudo-Schottky" diode which turns on at a lower voltage and provides a lower-resistance path than a conventional PN diode. When the gate is connected to the positive voltage the channel of the MOSFET is turned fully on. This MOSFET switch is particularly suitable for as a synchronous rectifier in a power converter where it reduces the power loss and stored charge in the "break before make" interval (i.e., the interval between the turn-off of the shunt switch and the turn-on of the synchronous rectifier).

REFERENCES:
patent: 5248627 (1993-09-01), Williams
patent: 5510641 (1996-04-01), Yee et al.
patent: 5744994 (1998-04-01), Williams

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