Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Five or more layer unidirectional structure
Patent
1995-08-18
1998-02-17
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Five or more layer unidirectional structure
257133, 257137, 257138, 257146, 257154, 257163, H01L 2974, H01L 31111
Patent
active
057194114
ABSTRACT:
MOS-gate controlled thyristor structures which have current saturation characteristics, do not have any parasitic thyristor structure, and require only a single gate drive. A resistive structure such as a MOSFET, Schottky diode, PN junction diode, diffused resistor or punch-through device (e.g. punch through PNP structure) is incorporated in series with the N.sup.+ emitter of the thyristor. In the on-state of the device, with a positive gate voltage, when operating at high currents, because of the voltage drop in the resistive structure in series with the N.sup.+ emitter, the potential of the N.sup.+ emitter, and along with it the potential of the P base, increases. When the potential is increased beyond a certain predetermined value, diversion of current is accomplished by one of the following ways: (i) the smallest distance between the P base region and the P.sup.+ cathode is such that punch-through occurs in these regions. Occurrence of punch-through creates paths to divert the hole current at areas where punch-through occurs; (ii) the threshold voltage and channel conductance of a PMOS is such that sufficient hole current diversion occurs. The doping of the P base region is such that formation of these punch-through or PMOS channel paths causes the resistance of the P base regions to ground to become sufficiently low so as to cause the thyristor current to become less than its holding current. This causes the thyristor to become unlatched. But the transistor paths (PNP and IGBT current paths) in the device still conduct current because the gate voltage of the turn-on DMOSFET is greater that its threshold voltage. Current in the device ultimately saturates similar to an IGBT.
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M.S. Shekar et al., "High-Voltage Current Saturation in Emitter Switched Thyristors", IEEE EDL, pp. 387-389 (Jul. 1991).
M. Nandakumar et al., "Fast Switching Power MOS-Gated (EST and BRT) Thyristors", Proceedings of International Symposium on Power Semiconductor Devices, May 1992.
B. Jackson et al., "Effects of Emitter-Open Switching on the Turn-Off Characteristics of High-Voltage Power Transistors", Power Electronics Specialist Conference, pp. 147-154, Jun. 1980.
V.A.K. Temple, "MOS Controlled Thyristors (MCT's)", IEDM Technical Digest, pp. 282-285 (Dec. 1984).
International Rectifier Corporation
Ngo Ngan V.
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