Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-01-10
2009-12-22
Wellington, Andrea L (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C360S320000, C360S322000
Reexamination Certificate
active
07636223
ABSTRACT:
In one illustrative example, a three terminal magnetic sensor (TTM) has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. The collector region is or includes a layer of semiconductor material. The base region includes a free layer structure. The TTM further includes a self-pinned layer structure and an in-stack longitudinal biasing layer (LBL) structure formed in stack with the sensor stack structure, with a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.
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Amendment submitted on May 11, 2009 for U.S. Appl. No. 11/032,598, filed Jan. 10, 2005.
Garcia Carlos E
Hitachi Global Storage Technologies - Netherlands B.V.
Nader Rambod
Oskorep, Esq. John J.
Wellington Andrea L
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