Three terminal bidirectional source to source FET circuit

Details Three terminal bidirectional source to source FET circuit Three terminal bidirectional source to source FET circuit

1982-06-21

1985-02-19

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307570, 307577, 307584, 363 60, H03K 1704, H03K 1766

Patent

active

045008027

ABSTRACT:
A three terminal bidirectional FET circuit is provided by first and second MOSFETs connected source to source in series relation between first and second main terminals, and by gating circuitry including current source means connected to a gate terminal for driving the FETs into conduction. A resistor is connected between a point common to the FET sources and a point common to the FET gates and the current source, such that the gate to source voltage for each FET is the same regardless of the relative polarity of the main terminals.

REFERENCES:
patent: 3215859 (1965-11-01), Sorchych
patent: 3532899 (1970-10-01), Huth et al.
patent: 4256979 (1981-03-01), Hendrickson et al.
patent: 4347445 (1982-08-01), Baker
patent: 4394590 (1983-07-01), Honda
Siliconix, Inc., "Designing with Field-Effect Transistors", edited by A.D. Evans, published by McGraw-Hill Book Co., New York, 1981, pp. 207-215.

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