Three terminal bidirectional drain to drain FET circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307270, 307577, 307584, H03K 1716, H03K 17687

Patent

active

044777426

ABSTRACT:
A three terminal bidirectional FET circuit is provided by first and second MOSFETs connected drain to drain in series relation between first and second main terminals, and by gating circuitry providing requisite gate drive to a corresponding FET regardless of the polarity of its correspondent main terminal. A current source is connected to a common point between the FET gates, which common gate point is referenced through a resistor and a pair of diodes to the most negative of the main terminals.

REFERENCES:
patent: 3215859 (1965-11-01), Sorchych
patent: 3532899 (1970-10-01), Huth et al.
patent: 4256979 (1981-03-01), Hendrickson et al.

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