Three-phase regulated high-voltage charge pump

Details Three-phase regulated high-voltage charge pump Three-phase regulated high-voltage charge pump

1981-12-10

1984-02-21

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, H03L 500, H03K 17687

Patent

active

044332530

ABSTRACT:
An internal bias generator for providing a negative bias voltage to the substrate of an MOS integrated circuit at a magnitude higher than the power supply voltage includes a pump circuit which comprises a plurality of switches which are sequentially actuated by nonoverlapping clock signals to alternately charge and discharge a capacitor. The clock signals are produced by a generator which includes a series of RC-delay inverting amplifier stages coupled to a series of NOR gates. The bias generator further comprises a threshold-sensitive regulator which uses the source-body effect of substrate bias on the threshold voltage of an MOS FET to control the magnitude of the applied bias voltage. When the sensed threshold voltage deviates from a desired level, certain of the clock signals are disabled, thereby to modify the bias voltage applied to the substrate in a manner to tend to restore the threshold voltage to its desired level.

REFERENCES:
patent: 4208595 (1980-06-01), Gladstein et al.
patent: 4307333 (1981-12-01), Hargrove
patent: 4322675 (1982-03-01), Lee et al.
patent: 4388537 (1983-06-01), Kanuma
Jensen, "Substrate Voltage Generator Circuit", IBM Tech. Disc. Bull., vol. 21, No. 5, Jul. 1978, pp. 727-728.

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