Coherent light generators – Particular active media – Semiconductor
Patent
1982-06-07
1984-12-11
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
350 9611, 372 45, H01S 319
Patent
active
044883072
ABSTRACT:
Disclosed is a GaA1As laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation.
REFERENCES:
patent: 3978426 (1976-08-01), Logan et al.
patent: 4054363 (1977-10-01), Suematsu
patent: 4136928 (1979-01-01), Logan et al.
patent: 4371966 (1983-02-01), Scifres et al.
IGA et al., "GaInAsP/InP DH Lasers and Related Fabricating Techniques for tegration", IEEE JQE vol. QE-15 No. 8, Aug. 1979, pp. 702-710.
Coldren et al., "Monolithic Two-Section GaInAsP/InP Active-Optical-Resonator Devices Formed by Reactive Ion Etching," Appl. Phys. Lett. 38(5), Mar. 1, 1981, pp. 315-317.
Suematsu et al., "Axial-Mode Selectivities for Various Types of Integrated Twin-Guide Lasers", IEEE JQE, vol. QE-13, No. 8, Aug. 1977, pp. 619-622.
Evans Gary A.
Garmire Elsa M.
Niesen Joseph W.
Adams Robert W.
Beers Robert F.
Davie James W.
The United States of America as represented by the Secretary of
LandOfFree
Three-mirror active-passive semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Three-mirror active-passive semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-mirror active-passive semiconductor laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1468342