Patent
1988-10-17
1990-09-25
Hille, Rolf
357 22, 357 236, 357 45, H01L 2702, H01L 2980, H01L 2978
Patent
active
049597051
ABSTRACT:
A (GaAs-resident) application specific monolithic microwave integrated circuit (ASMMIC) is fabricated through the use of footprints that include a portion of the metallization through which the circuit components within the wafer are to be interconnected. The metallization is a three layers structure, the first two layers of which include strategically arranged reactance circuit components (MIM) capacitors. A first of the three metal layers is formed on a first surface of the substrate which contains a plurality of semiconductor device regions and conductive material for ohmic contact to the regions, so that portions of the first metal layer are in ohmic contact with the conductive material. The first metal layer provides the bottom plate of the MIM capacitors. A dielectric layer, which serves as the dielectric insulator of the MIM capacitors, is formed on second portions of the first metal layer. A second, intermediate metal layer is selectively formed on the second portions of the first metal layer, to provide top plate segments of MIM capacitors. Personalization of the footprint is effected by an air bridge metal layer interconnecting the first and second metal layers and thereby semiconductor device regions of the semiconductor structure with capacitive reactance elements formed by the first and second metal layers.
REFERENCES:
patent: 4785202 (1988-11-01), Toyoda
patent: 4789645 (1988-12-01), Calviello et al.
patent: 4812895 (1989-03-01), Funck et al.
Lau Chung-Lim
Lemnios Zachary J.
McIntyre David G.
Williams Dennis A.
Ford Microelectronics, Inc.
Hille Rolf
Limanek Robert P.
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