Three mask process for making field effect transistors

Details Three mask process for making field effect transistors Three mask process for making field effect transistors

1978-05-08

1980-08-12

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 29578, 29589, 357 41, B01J 1700

Patent

active

042165733

ABSTRACT:
A three mask method is provided for making a field effect transistor which includes the use of a first mask for defining first and second spaced apart diffusion regions, each having first and second ends, a second mask for defining a contact region at the first end of the first and second diffusion regions and for defining a protected region at the gate region and source and drain electrodes of the transistor, the protected region extending between the second ends of the first and second diffusion regions, and a third mask for forming a gate electrode within the protected region and contact electrodes in the contact region. The source and drain electrodes are formed between the gate electrode and the first and second diffusion regions by ion implantation techniques. The surfaces of the first and second diffusion regions between the contact electrodes and the second end of the first and second diffusions are oxidized to provide a crossover arrangement for gate electrode wiring, when desired, without requiring additional process steps.

REFERENCES:
patent: 3533158 (1970-10-01), Bower

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