Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
1999-11-04
2001-09-18
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S752000
Reexamination Certificate
active
06291872
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to the structure of an inductor for mixed mode radio frequency (RF) integrated circuit devices, and more particularly to a vertical type inductor by using dual damascene process for mixed mode RF devices.
2. Description of the Prior Art
In recent years, for the brand new 0.18 um semiconductor process, there has been an increasing drive towards integrating high performance analog and digital circuitry on chip (mixed mode device). For the mixed mode radio frequency (RF) device, it needs to process the inductor on the electrical circuit. Current inductor is made by a horizontal aluminium-metal-line structure. The horizontal metal-line structure normally needs large area on chip. Especially, the resistance of aluminium is too high that leads the current small and the inductor performance impacted.
According to the above issue, normally a three-dimensional type structure is equivalent to a single-loop structure with a specific cross-section area that equals to the summation of cross-section area of each loop of the spiral structure. For a required inductance, the more loops inside the plane spiral structure the less area occupied by the plane spiral inductor. Therefore some disadvantages of the plane spiral structure are apparently observed, especially when the integrated circuit is highly integrated or the inductor is used by a radio frequency integrated circuit. The consumed space on the substrate by inductor is too large and the drawback is more obvious while integrated circuit is highly integrated or multilevel metallization is necessary.
SUMMARY OF THE INVENTION
In accordance with the present invention, the vertical-type structures for integrated circuit inductors are disclosed that substantially provides high inductance and improves the problem of energy dissipation by parasitic capacitor. Moreover, the vertical type inductors can also reduce the space on chip and increase the device density, hence decrease the production cost. Particularly, copper metal lines by using dual damascene process provide lower resistance and induce more current and then improve the inductor performance, thus this technology is widely applied to fabricate semiconductor device, especially to the 0.18 &mgr;m process in the future. In the following specification, three different sorts of embodiments including a single-loop, a parallel-loop and a screw type inductor are provided.
In the first embodiment, three-dimensional type structures, a single-loop type is utilized as an integrated circuit inductor. This inductor structure is formed on a semiconductor substrate and the axis of the structure is upright to the substrate. In another embodiment according to the present invention, a parallel-loop type structure for radio frequency (RF) integrated circuit inductor is provided. A screw type structure according to this invention is the third embodiment. It features an axis that is parallel to the surface of the substrate and threads into the semiconductor device.
REFERENCES:
patent: 5936298 (1999-08-01), Capocelli et al.
patent: 6031445 (2000-02-01), Marty et al.
patent: 6054329 (2000-04-01), Burghartz et al.
Dun Jowei
Lin Hway-Chi
Wang Ying-Lang
Wu Jun
Crane Sara
Taiwan Semiconductor Manufacturing Co. Ltd.
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