Three dimensional stacked nonvolatile semiconductor memory

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185230, C365S185050

Reexamination Certificate

active

08068364

ABSTRACT:
A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks disposed side by side in a first direction, and a driver disposed on one end of the memory cell array in a second direction orthogonal to the first direction. First select gate lines in the first block and first select gate lines in the second block are connected to the driver after they are commonly connected in one end in the second direction of the memory cell array in a relation of one to one.

REFERENCES:
patent: 5896317 (1999-04-01), Ishii et al.
patent: 6141250 (2000-10-01), Kashimura
patent: 7852675 (2010-12-01), Maejima
patent: 7852676 (2010-12-01), Maejima
patent: 7859902 (2010-12-01), Maejima
patent: 2009/0267128 (2009-10-01), Maejima
patent: 2009/0267139 (2009-10-01), Maejima
patent: 2011/0063913 (2011-03-01), Maejima
patent: 2011/0069550 (2011-03-01), Maejima
patent: 6-338602 (1994-12-01), None
patent: 2004-319577 (2004-11-01), None
patent: 0674952 (2007-01-01), None
patent: 2008-003816 (2008-04-01), None
H. Tanaka, et al., “Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory”, 2007 Symposium on VLSI Technology Digest of Technical Papers, pp. 14-15.
Office Action issued Oct. 25, 2001, Korean Patent Application No. 2009-24113 (w/English language translation).

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