Three-dimensional semiconductor memory device having a first...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185080

Reexamination Certificate

active

07570516

ABSTRACT:
A semiconductor device includes a sense amplifier and a decoder provided on a semiconductor substrate together with memory cells provided above the sense amplifier and the decoder. Each of the memory cells includes a channel region, in which current flows in a direction perpendicular to a surface of the semiconductor substrate, a charge accumulation region provided along the channel region, and an insulator film provided between the channel region and the charge accumulation region.

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