Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-11-22
2005-11-22
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
C438S031000, C438S061000
Reexamination Certificate
active
06967112
ABSTRACT:
A 3D quantum dot optical path structure is provided, along with a method for selectively forming a 3D quantum dot optical path. The method comprises: forming a single crystal Si substrate with a surface; forming a Si feature in the substrate, such as a via, trench, or pillar; forming dots from a Ge or SiGe material overlying the Si feature; and, forming an optical path that includes the dots. In some aspects of the method, the Si feature has defect sites. For example, the Si feature may be formed with a miscut angle. As a result of the miscut angle, steps are formed in the Si feature plane. Then, the dots are formed in the Si feature steps. The miscut angle is in the range between 0.1 and 5 degrees, and the spacing between steps is in the range between 1 and 250 nanometers (nm).
REFERENCES:
patent: 5229320 (1993-07-01), Ugajin
patent: 5482890 (1996-01-01), Liu et al.
patent: 5614435 (1997-03-01), Petroff et al.
patent: 5683595 (1997-11-01), Nagamachi et al.
patent: 6139626 (2000-10-01), Norris et al.
patent: 6242326 (2001-06-01), Ro et al.
patent: 6333214 (2001-12-01), Kim et al.
patent: 6346431 (2002-02-01), Yoo et al.
patent: 6541788 (2003-04-01), Petroff et al.
patent: 6632694 (2003-10-01), Torvik
patent: 2004/0053469 (2004-03-01), Park
patent: 2004/0152225 (2004-08-01), Chen et al.
P. Boucaud, V. Le Thanh, S. Sauvage, D. Débarre, and D. Bouchier, Appl. Phys. Lett., 74, 1999, 401.
Hsu Sheng Teng
Lee Jong-Jan
Maa Jer-Shen
Tweet Douglas J.
Cordeiro David A.
Curtin Joseph P.
Dang Phuc T.
Ripma David C.
Sharp Laboratories of America Inc.
LandOfFree
Three-dimensional quantum dot structure for infrared... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Three-dimensional quantum dot structure for infrared..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional quantum dot structure for infrared... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3507062