Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-03-05
1998-04-28
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257296, 257304, 257307, 257756, 257748, 257755, 257754, 257906, 438210, 438394, H01L 2968, H01L 2704, H01L 27108, H01L 2978
Patent
active
057448531
ABSTRACT:
A three-dimensional polysilicon capacitor for use within integrated circuits and a method by which the three-dimensional polysilicon capacitor is formed. Formed upon a semiconductor substrate is a first polysilicon layer which has a series of apertures formed at least partially through the first polysilicon layer. A conformal insulator layer is then formed upon the first polysilicon layer and into the apertures within the first polysilicon layer. The conformal insulator layer has a series of apertures corresponding to the series of apertures within the first polysilicon layer. A second polysilicon layer is then formed upon the surface of the conformal insulator layer and filling the apertures within the conformal insulator layer. Optionally, the first polysilicon layer may be formed from a multi-coating stack comprising two polysilicon coatings separated by an metal silicide etch stop layer.
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Pan Yang
Quek Elgin Kiok Boone
Ackerman Stephen B.
Chartered Semiconductor Manufacturing PTE LTD
Fahmy Wael
Saile George O.
Szecsy Alek P.
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