Three-dimensional phase-change memory

Details Three-dimensional phase-change memory Three-dimensional phase-change memory

2008-06-24

2008-06-24

Quach, Tuan N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S209000, C257S529000, C257S544000, C257SE27026

Reexamination Certificate

active

07391045

ABSTRACT:
A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-change memory elements disposed above the first and second plurality of diodes and a second plurality of memory elements disposed above the first plurality of memory elements.

REFERENCES:
patent: 6420215 (2002-07-01), Knall et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6525953 (2003-02-01), Johnson
patent: 6737675 (2004-05-01), Patel et al.
patent: 7081377 (2006-07-01), Cleeves
patent: 7259038 (2007-08-01), Scheuerlein
patent: 2008/0035905 (2008-02-01), Parkinson

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