Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-10-09
2007-10-09
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S154000, C365S185170, C365S225700
Reexamination Certificate
active
11179360
ABSTRACT:
A shadow RAM or “non-volatile SRAM” memory cell is implemented in a much smaller area by building the cell upward rather than outward. By stacking non-volatile storage devices above or below an SRAM cell, a smaller cell can be provided and result in a lower cost memory device. In certain embodiments, such a memory cell includes a pair of cross-coupled devices disposed on a first device layer and defining a pair of internal cross-coupled nodes, and a pair of non-volatile storage devices disposed on a second device layer above or below the pair of cross-coupled devices and coupled to the cross-coupled nodes.
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Ho Hoai V.
SanDisk 3D LLC
Zagorin O'Brien Graham LLP
LandOfFree
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