Three-dimensional network for chemical mechanical polishing

Details Three-dimensional network for chemical mechanical polishing Three-dimensional network for chemical mechanical polishing

2006-06-08

2009-10-20

Hail, III, Joseph J. (Department: 3723)

Abrading

Flexible-member tool, per se

Interrupted or composite work face

C451S287000, C451S530000

Reexamination Certificate

active

07604529

ABSTRACT:
The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnected unit cells (225). The interconnected unit cells (225) are reticulated for allowing fluid flow and removal of polishing debris. A plurality of polishing elements (208) form the three-dimensional network of interconnected unit cells (225). The polishing elements (208) have a mean height (214) to a mean width (222) ratio of at least 3. The polishing surface (200) formed from the plurality of polishing elements (208) remains consistent for multiple polishing operations.

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Steigarwald et al., “Chemical Mechanical Planarization of Microelectronic Materials”; New York, NY; 1997; pp. 66-83.

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