Three dimensional NAND memory

Details Three dimensional NAND memory Three dimensional NAND memory

2007-03-27

2010-12-07

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C365S051000, C365S063000, C365S072000

Reexamination Certificate

active

07848145

ABSTRACT:
A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell, a select transistor, a first word line of the first memory cell, a second word line of the second memory cell, a bit line, a source line, and a select gate line of the select transistor. The first and the second word lines are not parallel to the bit line, and the first and the second word lines extend parallel to at least one of the source line and the select gate line.

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