Three-dimensional memory element and memory device

Details Three-dimensional memory element and memory device Three-dimensional memory element and memory device

1989-08-24

1990-11-20

Clawson, Jr., Joseph E.

Static information storage and retrieval

Radiant energy

365107, 365117, 365175, 365182, 357 4, 357 6, 357 8, 357 51, G11C 1122, G11C 1124

Patent

active

049723707

ABSTRACT:
A three-dimensional memory element comprises a multilayer tunnel switch portion formed by alternately stacking conductive films and insulating films, both the ends of the switch portion consisting of insulating films, a write electrode formed on the insulating film as one end of the multilayer tunnel switch portion, a read electrode formed on the insulating film as the other end of the multilayer tunnel switch portion, and charge accumulating capacitors respectively connected to the conductive films of the multilayer tunnel switch portion.

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