Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2006-07-25
2006-07-25
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
C438S600000
Reexamination Certificate
active
07081377
ABSTRACT:
A 3D semiconductor memory is described having rail-stacks which define conductive lines and cells. The memory levels are organized in pairs with each pair showing common lines in adjacent levels.
REFERENCES:
patent: 5110754 (1992-05-01), Lowrey et al.
patent: 5835396 (1998-11-01), Zhang
patent: 6420215 (2002-07-01), Knall et al.
patent: 6515888 (2003-02-01), Johnson et al.
Nguyen Tuan H.
Sandisk 3D LLC
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