Three dimensional integrated device and circuit structures

Details Three dimensional integrated device and circuit structures Three dimensional integrated device and circuit structures

1993-02-03

1994-06-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Groove

257618, 257623, 257760, 257510, H01L 2906, H01L 2900, H01L 2940

Patent

active

053192400

ABSTRACT:
A set of three-dimensional structures and devices may be wired together to perform a wide variety of circuit functions such as SRAMs, DRAMs, ROMs and PLAs. Both N-Channel and P-Channel transistors can be made. The P-channel devices are fabricated conventionally in separate N-wells or, alternatively, they are constructed in a like manner to the array N-channel devices. N and P diffused wire can be electrically joined at polysilicon contacts.

REFERENCES:
patent: 3982267 (1976-09-01), Henry
patent: 3988760 (1976-10-01), Cline et al.
patent: 4091406 (1978-05-01), Lewis
patent: 4255207 (1981-03-01), Nicolay et al.
patent: 4717681 (1988-01-01), Curran

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