Three-dimensional integrated circuit structure

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S046000, C257S544000

Reexamination Certificate

active

07888764

ABSTRACT:
A semiconductor structure includes an interconnect region and a semiconductor stack bonded to the interconnect region through a bonding region. The stack includes at least two semiconductor layers having different electrical properties. The stack also includes single crystalline semiconductor material. The stack can be processed to form a mesa structure and the mesa structure can be processed to from a vertically oriented semiconductor device.

REFERENCES:
patent: 5324980 (1994-06-01), Kusunoki
patent: 5563084 (1996-10-01), Ramm et al.
patent: 6849891 (2005-02-01), Hsu et al.
patent: 6943067 (2005-09-01), Greenlaw
patent: 2004/0012016 (2004-01-01), Underwood et al.
patent: 2007/0145514 (2007-06-01), Kocon
patent: 2008/0017906 (2008-01-01), Pelella et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Three-dimensional integrated circuit structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Three-dimensional integrated circuit structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Three-dimensional integrated circuit structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2637411

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.