Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Plural recrystallized semiconductor layers
Patent
1998-06-26
1999-12-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Plural recrystallized semiconductor layers
257232, 257303, 257306, 257443, 257444, 257350, 257777, H01L 3100
Patent
active
059988088
ABSTRACT:
A three-dimensional integrated circuit device incorporating any two-dimensional LSIs, such as CCD, MOS-type imaging device and DRAM using trench-type capacitors as its memory cell, can be manufactured economically. Each two-dimensional LSI is prepared by first forming a single-crystal silicon layer on a single-crystal silicon substrate via a porous silicon layer and thereafter forming the two-dimensional LSI on the single-crystal silicon layer. After a support substrate is bonded to the surface of the two-dimensional LSI, the two-dimensional LSI is detached from the single-crystal silicon substrate along the porous layer, and subsequently stacked on another two-dimensional LSI formed on another single-crystal silicon substrate by bonding the bottom surface of the former to the top surface of the latter. After a desired number of two-dimensional LSIs in form of thin films are stacked, the top surface of a two-dimensional LSI formed on a single-crystal silicon substrate is bonded to the bottom surface of the last stacked two-dimensional LSI to complete a three-dimensional VLSI. The thickness of the single crystal silicon layer is determined depending upon the two-dimensional LSI formed thereon.
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Mintel William
Sony Corporation
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