Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-05-16
2006-05-16
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S770000
Reexamination Certificate
active
07045466
ABSTRACT:
Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
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Huang Xiaojun T.
MacDonald Noel C.
Subramanian Kanakasabapathi
Cornell Research Foundation Inc.
Sarkar Asok Kumar
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