Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-12-04
2007-12-04
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S398000
Reexamination Certificate
active
10834547
ABSTRACT:
A ferroelectric capacitor is provided in which the surface area of a ferroelectric thin film is expanded to increase the amount of polarization. In the ferroelectric capacitor, hemi-spherical protruding parts 31 are formed with HSG-growth on the surface of a polycrystalline silicon film 30. On the polycrystalline silicon film 30 having the hemi-spherical protruding parts 31 are sequentially laminated an adhesive layer 32, lower electrode 33, ferroelectric film 34, and upper electrode 35. The ferroelectric film 34 is shaped to overlap the shape of hemi-spherical protruding parts 31 of the polycrystalline silicon film 30, and the surface area thereof is expanded.
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Isobe Chiharu
Sakai Yoshio
Perkins Pamela E
Smith Zandra V.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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