Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-02-13
2010-11-09
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S103000, C438S029000, C438S069000, C438S071000
Reexamination Certificate
active
07829906
ABSTRACT:
A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.
REFERENCES:
patent: 3954534 (1976-05-01), Scifres et al.
patent: 4545366 (1985-10-01), O'Neill
patent: 4672949 (1987-06-01), O'Neill
patent: 4711972 (1987-12-01), O'Neill
patent: 4719904 (1988-01-01), O'Neill
patent: 4865685 (1989-09-01), Palmour
patent: 4915981 (1990-04-01), Traskos et al.
patent: 4918497 (1990-04-01), Edmond
patent: 4946547 (1990-08-01), Palmour et al.
patent: 4966862 (1990-10-01), Edmond
patent: 5027168 (1991-06-01), Edmond
patent: 5087535 (1992-02-01), Hirokane et al.
patent: 5210051 (1993-05-01), Carter, Jr.
patent: 5210766 (1993-05-01), Winer et al.
patent: 5338944 (1994-08-01), Edmond et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5416342 (1995-05-01), Edmond et al.
patent: 5498297 (1996-03-01), O'Neill et al.
patent: 5505789 (1996-04-01), Fraas et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5604135 (1997-02-01), Edmond et al.
patent: 5631190 (1997-05-01), Negley
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
patent: 5837576 (1998-11-01), Chen et al.
patent: 5912477 (1999-06-01), Negley
patent: 6031179 (2000-02-01), O'Neill
patent: 6075200 (2000-06-01), O'Neill
patent: 6111190 (2000-08-01), O'Neill
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6187606 (2001-02-01), Edmond et al.
patent: 6201262 (2001-03-01), Edmond et al.
patent: 6393685 (2002-05-01), Collins
patent: 6410348 (2002-06-01), Chen et al.
patent: 6410942 (2002-06-01), Thibeault et al.
patent: 6483196 (2002-11-01), Wojnarowski et al.
patent: 6504180 (2003-01-01), Heremans et al.
patent: 6639931 (2003-10-01), Dowd et al.
patent: 6657236 (2003-12-01), Thibeault et al.
patent: 6747298 (2004-06-01), Slater, Jr. et al.
patent: 6784512 (2004-08-01), Yamaguchi et al.
patent: 6791119 (2004-09-01), Slater, Jr. et al.
patent: 6804062 (2004-10-01), Atwater et al.
patent: 6821804 (2004-11-01), Thibeault et al.
patent: 6888167 (2005-05-01), Slater, Jr. et al.
patent: 6943117 (2005-09-01), Jeong et al.
patent: 7211833 (2007-05-01), Slater, Jr. et al.
patent: 7250635 (2007-07-01), Lee et al.
patent: 7384809 (2008-06-01), Donofrio
patent: 7419912 (2008-09-01), Donofrio
patent: 2002/0123164 (2002-09-01), Slater, Jr. et al.
patent: 2003/0006418 (2003-01-01), Emerson et al.
patent: 2003/0006527 (2003-01-01), Rabolt et al.
patent: 2004/0056260 (2004-03-01), Slater, Jr. et al.
patent: 2004/0232410 (2004-11-01), Dahmani et al.
patent: 2005/0151138 (2005-07-01), Slater, Jr. et al.
patent: 2005/0194584 (2005-09-01), Slater, Jr. et al.
patent: 2005/0227379 (2005-10-01), Donofrio
patent: 2006/0269853 (2006-11-01), Yang
patent: 2007/0080365 (2007-04-01), Watanabe
patent: 442002 (1991-08-01), None
patent: 1 263 058 (2005-05-01), None
patent: 1 690 301 (2006-08-01), None
patent: 2221791 (1990-02-01), None
patent: 2002/041364 (2002-05-01), None
patent: WO 02/41362 (2002-05-01), None
patent: WO 02/41362 (2002-05-01), None
patent: WO 02/073705 (2002-09-01), None
patent: WO 03/017385 (2003-02-01), None
patent: WO 2005/048363 (2005-05-01), None
patent: WO 2005/104253 (2005-11-01), None
Pan et al. “Improvement of InGaN-GaN Light-Emitting Diodes with Surface-Textured Indium-Tin-Oxide Transparent Ohmic Contacts,” IEEE Photonics Technology Letters, vol. 15, No. 5, May 2003.
Shafeev et al. “Uncongruent laser ablation and electroless metallization of SiC,” Applied Physics Letters, vol. 68, No. 6, Feb. 5, 1996.
International Search Report and Written Opinion of the International Searching Authority for Corresponding PCT Appliction No. PCT/US2005/001933, mailed on Aug. 6, 2005.
Boehlen et al., “Laser Micro-Machining of High Density Optical Structures on Large Substrates,” Exitech Ltd, Oxford Industrial Park, 10 pages.
Craford, Overview of Device Issues in High-Brightness Light-Emitting Diodes, Chapter 2, High Brightness Light Emitting Diodes: Semiconductors and Semimetals, vol. 48, Stringfellow et al. ed., Academic Press, 1997, pp. 47-63.
Köck et al., “Strongly Directional Emission from AlGaAs/GaAs Light Emitting Diodes,” Applied Physics Letters, 57(22): 2327-2329 (Nov. 26, 1990).
Krames at al., “High Power Truncated-Inverted Pyramid (AlxGa1-x)0,51n0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Applied Physics Letters, 75(16): 2365-2367 (Oct. 18, 1999).
Shnitzer et al., “30% External Quantum Efficiency from Surface Textured, Thin-Film Light Emitting Diodes,” Applied Physics Letters 63(16): 2174-2176 (Oct. 18, 1993).
Shnitzer et al., “Ultrahigh Spontaneous Emission Quantum Efficiency, 99.7% Internally and 72% Externally, from AlGaAs/GaAs/AlGaAs Double Heterostructures,” Applied Physics Letters, 62(2): 131-133 (Jan. 11, 1993).
Yamada et al. “InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode,” Jpn J Appl Phys vol. 41 pt. 2 No. 12b, pp. L1431-L1433 (2002).
Micro Chem catalog, “Nano SU-8, Negative Tone Photoresist Formulations 2-25,” Feb. 2002.
Office Action, European Patent Application No. 05 711 77.1, Mar. 9, 2007, 10 pages.
Chambliss Alonzo
Cree Inc.
Myers Bigel & Sibley & Sajovec
LandOfFree
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