Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Patent
1998-07-06
2000-09-12
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
257 4, 257 5, 257594, H01L 4700
Patent
active
061181358
ABSTRACT:
A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed proximate to inner surfaces of a diode container. A multi-state memory element may be formed of a multi-state material, such as a chalcogenide, above a diode to complete a memory cell.
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Gonzalez Fernando
Ingalls Charles L.
Turi Raymond A.
Wolstenholme Graham R.
Micro)n Technology, Inc.
Tran Minh Loan
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