Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-08-02
2005-08-02
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C250S338400, C250S349000, C343S786000, C358S484000
Reexamination Certificate
active
06924169
ABSTRACT:
A manufacturing method for a three dimensional conical horn antenna coupled image detector includes depositing a sacrificial layer on the upper section of the substrate, and forming a pattern for the sacrificial layer is by performing a patterning process using the first etching mask. The method further includes depositing a first silicon nitride layer, forming a first silicon nitride layer, depositing a vanadium oxide layer, forming a vanadium oxide layer pattern, depositing a conductive layer, forming a conductive layer pattern, depositing a second silicon nitride layer, forming a second silicon nitride layer pattern, depositing a third silicon nitride layer, forming a side wall space pattern, and after the sacrificial layer is removed, performing an aligning process using a seventh etching mask.
REFERENCES:
patent: 4214165 (1980-07-01), Asawa
patent: 4463262 (1984-07-01), Contreras
patent: 4532424 (1985-07-01), Cheung
patent: 5604607 (1997-02-01), Mirzaoff
Stanley Wolf Silicon Processing For The VSLI Era vol. 2 Lattice Press 1990 pp. 42 and 52.
Sung Moon et al., “Fabrication of Thz Band Horn Shape Antenna”, 2000 Fall Thesis Competition, Korea Electrical Study Association, p. 581-682, Nov. 25, 2000, along with an English language abstract.
Kim Kun Tae
Moon Sung
Blum David S.
Greenblum & Bernstein P.L.C.
Korea Institute of Science and Technology
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